Numerical simulation of the temperature dependence of the...

Physics of the Solid State 2003 / 11 Vol. 45; Iss. 11

Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

N. A. Poklonskii, S. A. Vyrko, A. G. Zabrodskii, S. V. Egorov
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Volume:
45
Language:
english
Pages:
7
DOI:
10.1134/1.1626737
Date:
November, 2003
File:
PDF, 106 KB
english, 2003
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