A Difference in the change of parameters of...

Technical Physics Letters 2003 / 12 Vol. 29; Iss. 12

A Difference in the change of parameters of silicon-on-sapphire structures upon X-ray irradiation from the sides of epitaxial layer and substrate

A. N. Kiselev, V. A. Perevoshchikov, V. D. Skupov, D. O. Filatov
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Volume:
29
Language:
english
Pages:
3
DOI:
10.1134/1.1639445
Date:
December, 2003
File:
PDF, 422 KB
english, 2003
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