Formation of nanocrystalline silicon films using high-dose H+ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing
I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovskii, K. S. ZhuravlevVolume:
38
Language:
english
Pages:
6
DOI:
10.1134/1.1641141
Date:
January, 2004
File:
PDF, 143 KB
english, 2004