Formation of nanocrystalline silicon films using high-dose...

Formation of nanocrystalline silicon films using high-dose H+ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

I. E. Tyschenko, V. P. Popov, A. B. Talochkin, A. K. Gutakovskii, K. S. Zhuravlev
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Volume:
38
Language:
english
Pages:
6
DOI:
10.1134/1.1641141
Date:
January, 2004
File:
PDF, 143 KB
english, 2004
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