The influence of P+, B+, and N+ion implantation on the...

Physics of the Solid State 2004 / 01 Vol. 46; Iss. 1

The influence of P+, B+, and N+ion implantation on the luminescence properties of the SiO2: nc-Si system

D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin, A. N. Mikhaylov, D. M. Gaponova, S. V. Morozov, A. I. Kovalev
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Volume:
46
Language:
english
Pages:
5
DOI:
10.1134/1.1641912
Date:
January, 2004
File:
PDF, 70 KB
english, 2004
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