![](/img/cover-not-exists.png)
The influence of P+, B+, and N+ion implantation on the luminescence properties of the SiO2: nc-Si system
D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin, A. N. Mikhaylov, D. M. Gaponova, S. V. Morozov, A. I. KovalevVolume:
46
Language:
english
Pages:
5
DOI:
10.1134/1.1641912
Date:
January, 2004
File:
PDF, 70 KB
english, 2004