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Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil’nik, D. I. KryzhkovVolume:
46
Language:
english
Pages:
3
DOI:
10.1134/1.1641932
Date:
January, 2004
File:
PDF, 115 KB
english, 2004