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Effect of thep-njunction breakdown mechanism on the Er3+ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy
V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil’nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil’nikova, D. I. Kryzhkov, M. N. DrozdovVolume:
46
Language:
english
Pages:
4
DOI:
10.1134/1.1641934
Date:
January, 2004
File:
PDF, 141 KB
english, 2004