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Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect
I. L. Drichko, A. M. D’yakonov, I. Yu. Smirnov, Yu. M. Gal’perin, V. V. Preobrazhenskii, A. I. ToropovVolume:
38
Language:
english
Pages:
10
DOI:
10.1134/1.1766376
Date:
June, 2004
File:
PDF, 156 KB
english, 2004