Formation of electrically active centers in silicon...

Semiconductors 2004 / 07 Vol. 38; Iss. 7

Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

E. P. Neustroev, S. A. Smagulova, I. V. Antonova, L. N. Safronov
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Volume:
38
Language:
english
Pages:
5
DOI:
10.1134/1.1777595
Date:
July, 2004
File:
PDF, 64 KB
english, 2004
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