MBE of InGaN/GaN heterostructures using ammonia as a source...

Technical Physics Letters 2004 / 07 Vol. 30; Iss. 7

MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen

S. I. Petrov, A. P. Kaidash, D. M. Krasovitskii, I. A. Sokolov, Yu. V. Pogorel’skii, V. P. Chalyi, A. P. Shkurko, M. V. Stepanov, M. V. Pavlenko, D. A. Baranov
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Volume:
30
Language:
english
Pages:
3
DOI:
10.1134/1.1783408
Date:
July, 2004
File:
PDF, 45 KB
english, 2004
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