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Microwave field-effect transistors based on group-III nitrides
S. B. Aleksandrov, D. A. Baranov, A. P. Kaidash, D. M. Krasovitskii, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel’skii, I. A. Sokolov, M. V. Stepanov, V. P. Chalyi, N. B. Gladysheva, A. A. Dorofeev, YVolume:
38
Language:
english
Pages:
5
DOI:
10.1134/1.1808836
Date:
October, 2004
File:
PDF, 60 KB
english, 2004