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MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
V. V. Lundin, E. E. Zavarin, A. I. Besulkin, A. G. Gladyshev, A. V. Sakharov, M. F. Kokorev, N. M. Shmidt, A. F. Tsatsul’nikov, N. N. Ledentsov, Zh. I. Alferov, R. KakanakovVolume:
38
Language:
english
Pages:
3
DOI:
10.1134/1.1823068
Date:
November, 2004
File:
PDF, 45 KB
english, 2004