Spin effects in magnetoresistance induced in...

Semiconductors 2005 / 01 Vol. 39; Iss. 1

Spin effects in magnetoresistance induced in ann-InxGa1−xAs/GaAs double quantum well by a parallel magnetic field

M. V. Yakunin, G. A. Al’shanskii, Yu. G. Arapov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, L. Ponomarenko
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Volume:
39
Language:
english
Pages:
6
DOI:
10.1134/1.1852657
Date:
January, 2005
File:
PDF, 81 KB
english, 2005
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