The density of states in the mobility gap of amorphous...

Semiconductors 2005 / 03 Vol. 39; Iss. 3

The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium

A. V. Biryukov, A. G. Kazanskii, E. I. Terukov, K. Yu. Khabarova
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Volume:
39
Language:
english
Pages:
3
DOI:
10.1134/1.1882800
Date:
March, 2005
File:
PDF, 56 KB
english, 2005
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