Modification of the near-surface layer ofn-Si by hydrogen...

Modification of the near-surface layer ofn-Si by hydrogen ions in a high-voltage pulsed beam discharge

V. P. Demkin, S. V. Mel’nichuk, B. S. Semukhin
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Volume:
31
Language:
english
Pages:
3
DOI:
10.1134/1.1920376
Date:
April, 2005
File:
PDF, 89 KB
english, 2005
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