Threshold behavior of the formation of nanometer islands in...

Semiconductors 2005 / 05 Vol. 39; Iss. 5

Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

G. E. Cirlin, V. G. Dubrovskii, A. A. Tonkikh, N. V. Sibirev, V. M. Ustinov, P. Werner
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Volume:
39
Language:
english
Pages:
5
DOI:
10.1134/1.1923563
Date:
May, 2005
File:
PDF, 275 KB
english, 2005
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