The formation of silicon nanocrystals in SiO2layers by the...

Semiconductors 2005 / 05 Vol. 39; Iss. 5

The formation of silicon nanocrystals in SiO2layers by the implantation of Si ions with intermediate heat treatments

G. A. Kachurin, V. A. Volodin, D. I. Tetel’baum, D. V. Marin, A. F. Leier, A. K. Gutakovskii, A. G. Cherkov, A. N. Mikhailov
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Volume:
39
Language:
english
Pages:
5
DOI:
10.1134/1.1923564
Date:
May, 2005
File:
PDF, 237 KB
english, 2005
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