The diffusion mechanism in the formation of GaAs and AlGaAs...

Semiconductors 2005 / 05 Vol. 39; Iss. 5

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov, Yu. B. Samsonenko, A. A. Tonkikh, V. M. Ustinov
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Volume:
39
Language:
english
Pages:
8
DOI:
10.1134/1.1923565
Date:
May, 2005
File:
PDF, 317 KB
english, 2005
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