The physical properties of CdTe doped with V and Ge

Semiconductors 2005 / 06 Vol. 39; Iss. 6

The physical properties of CdTe doped with V and Ge

S. Yu. Paranchych, L. D. Paranchych, V. N. Makogonenko, Yu. V. Tanasyuk, M. D. Andriichuk, V. R. Romanyuk
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Volume:
39
Language:
english
Pages:
4
DOI:
10.1134/1.1944864
Date:
June, 2005
File:
PDF, 71 KB
english, 2005
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