A new memory element based on silicon nanoclusters in a...

Semiconductors 2005 / 06 Vol. 39; Iss. 6

A new memory element based on silicon nanoclusters in a ZrO2insulator with a high permittivity for electrically erasable read-only memory

V. A. Gritsenko, K. A. Nasyrov, D. V. Gritsenko, Yu. N. Novikov, A. L. Aseev, J. H. Lee, J. -W. Lee, C. W. Kim
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
39
Language:
english
Pages:
6
DOI:
10.1134/1.1944865
Date:
June, 2005
File:
PDF, 76 KB
english, 2005
Conversion to is in progress
Conversion to is failed