The effects of interface states on the capacitance and...

Semiconductors 2005 / 07 Vol. 39; Iss. 7

The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes

N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Yu. G. Shreter
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Volume:
39
Language:
english
Pages:
5
DOI:
10.1134/1.1992637
Date:
July, 2005
File:
PDF, 75 KB
english, 2005
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