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Dependence of the upper critical field on the defect concentration in MgB2and the electronic structure parameters
S. I. Krasnosvobodtsev, A. V. Varlashkin, A. I. Golovashkin, N. P. ShabanovaVolume:
47
Language:
english
Pages:
5
DOI:
10.1134/1.2045340
Date:
September, 2005
File:
PDF, 67 KB
english, 2005