Light-emitting diodes based on GaSb alloys for the 1.6–4.4...

Semiconductors 2005 / 11 Vol. 39; Iss. 11

Light-emitting diodes based on GaSb alloys for the 1.6–4.4 μm mid-infrared spectral range

T. N. Danilova, B. E. Zhurtanov, A. N. Imenkov, Yu. P. Yakovlev
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Volume:
39
Language:
english
Pages:
32
DOI:
10.1134/1.2128447
Date:
November, 2005
File:
PDF, 482 KB
english, 2005
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