GaN films grown by vapor-phase epitaxy in a...

Technical Physics Letters 2005 / 11 Vol. 31; Iss. 11

GaN films grown by vapor-phase epitaxy in a hydride-chloride system on Si(111) substrates with AlN buffer sublayers

V. N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev, E. V. Konenkova, G. N. Mosina, S. D. Raevskii, S. N. Rodin, Sh. Sharofidinov, M. P. Shcheglov, Hee Seok Park, Masayoshi Koike
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Volume:
31
Language:
english
Pages:
4
DOI:
10.1134/1.2136951
Date:
November, 2005
File:
PDF, 78 KB
english, 2005
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