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Quench-induced defects in silicon doped with group III acceptor impurities: Generation and annealing
D. I. Brinkevich, V. S. ProsolovichVolume:
42
Language:
english
Pages:
4
DOI:
10.1134/s0020168506090019
Date:
September, 2006
File:
PDF, 135 KB
english, 2006