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High-power InP/GaInAsP buried heterostructure semiconductor laser with a modulation band of up to 10 GHz
M. G. Vasil’ev, A. M. Vasil’ev, A. A. ShelyakinVolume:
46
Language:
english
Pages:
6
DOI:
10.1134/s0020168510090177
Date:
September, 2010
File:
PDF, 255 KB
english, 2010