![](/img/cover-not-exists.png)
Thermodynamic modeling of the behavior of silicon oxide and nitride precursors in the preparation of dielectric layers
V. A. Titov, V. I. Rakhlin, A. A. Titov, F. A. Kuznetsov, M. G. VoronkovVolume:
80
Language:
english
Pages:
4
DOI:
10.1134/s0036024406120065
Date:
December, 2006
File:
PDF, 159 KB
english, 2006