Epitaxial growth of CeO2on silicon and distribution of...

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 2008 / 10 Vol. 2; Iss. 5

Epitaxial growth of CeO2on silicon and distribution of element concentration at the interface

V. G. Beshenkov, A. G. Znamenskii, V. A. Marchenko
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Volume:
2
Language:
english
Pages:
4
DOI:
10.1134/s1027451008050078
Date:
October, 2008
File:
PDF, 208 KB
english, 2008
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