Investigation of HfO2/SiO2/n-Si(001)-based MOS structures...

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 2010 / 06 Vol. 4; Iss. 3

Investigation of HfO2/SiO2/n-Si(001)-based MOS structures via ballistic electron emission microscopy

M. A. Lapshina, M. A. Isakov, D. O. Filatov, S. V. Tikhonov, Yu. A. Matveev, A. V. Zenkevich
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Volume:
4
Language:
english
Pages:
12
DOI:
10.1134/s1027451010030109
Date:
June, 2010
File:
PDF, 926 KB
english, 2010
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