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Influence of defects in gate-oxide peripheral regions on the electrical characteristics of MOS structures
A. Yu. Savenko, V. Ya. Uritsky, V. V. HramthzovVolume:
35
Language:
english
Pages:
13
DOI:
10.1134/s1063739706040044
Date:
July, 2006
File:
PDF, 225 KB
english, 2006