Electrical properties of InAs-SiO2-In2O3MIS structures with...

Russian Microelectronics 2009 / 03 Vol. 38; Iss. 2

Electrical properties of InAs-SiO2-In2O3MIS structures with a modified interface

N. A. Valisheva, A. A. Guzev, A. P. Kovchavtsev, G. L. Kuryshev, T. A. Levtsova, Z. V. Panova
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Volume:
38
Language:
english
Pages:
8
DOI:
10.1134/s1063739709020024
Date:
March, 2009
File:
PDF, 246 KB
english, 2009
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