Electrophysical characteristics of HfO2gate structures...

Electrophysical characteristics of HfO2gate structures formed by electron-beam evaporation

A. G. Vasil’ev, R. A. Zakharov, A. A. Orlikovskii, A. E. Rogozhin, M. S. Sonin, I. A. Khorin
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Volume:
38
Language:
english
Pages:
7
DOI:
10.1134/s1063739709050059
Date:
September, 2009
File:
PDF, 243 KB
english, 2009
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