Electrophysical characteristics of HfO2gate structures formed by electron-beam evaporation
A. G. Vasil’ev, R. A. Zakharov, A. A. Orlikovskii, A. E. Rogozhin, M. S. Sonin, I. A. KhorinVolume:
38
Language:
english
Pages:
7
DOI:
10.1134/s1063739709050059
Date:
September, 2009
File:
PDF, 243 KB
english, 2009