Temporal characterization of static CMOS RAM, compiled by...

Russian Microelectronics 2011 / 12 Vol. 40; Iss. 7

Temporal characterization of static CMOS RAM, compiled by Subμm design rules

V. A. Bachmanov, S. A. Bobrikov, I. V. Zabolotnov
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Volume:
40
Language:
english
Pages:
6
DOI:
10.1134/s1063739711070031
Date:
December, 2011
File:
PDF, 213 KB
english, 2011
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