Electronic topological transition in ann-BiSb semiconductor...

Journal of Experimental and Theoretical Physics 2010 / 08 Vol. 111; Iss. 2

Electronic topological transition in ann-BiSb semiconductor alloy in the quantum limit range of magnetic fields for H‖C2

N. A. Red’ko, V. D. Kagan, M. P. Volkov
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Volume:
111
Language:
english
Pages:
5
DOI:
10.1134/s1063776110080145
Date:
August, 2010
File:
PDF, 251 KB
english, 2010
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