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On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface
S. Yu. Davydov, O. V. PosrednikVolume:
40
Language:
english
Pages:
3
DOI:
10.1134/s1063782606030080
Date:
March, 2006
File:
PDF, 141 KB
english, 2006