Effect of intraband carrier relaxation on the threshold...

Semiconductors 2006 / 04 Vol. 40; Iss. 4

Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers

I. A. Kostko, N. A. Gun’ko, N. L. Bazhenov, K. D. Mynbaev, G. G. Zegrya
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Volume:
40
Language:
english
Pages:
5
DOI:
10.1134/s1063782606040208
Date:
April, 2006
File:
PDF, 209 KB
english, 2006
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