Quantum efficiency and formation of the emission line in...

Semiconductors 2007 / 01 Vol. 41; Iss. 1

Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

N. I. Bochkareva, D. V. Tarkhin, Yu. T. Rebane, R. I. Gorbunov, Yu. S. Lelikov, I. A. Martynov, Yu. G. Shreter
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Volume:
41
Language:
english
Pages:
7
DOI:
10.1134/s1063782607010174
Date:
January, 2007
File:
PDF, 226 KB
english, 2007
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