Effect of tensile-strained Si layer on photoluminescence of...

Semiconductors 2007 / 02 Vol. 41; Iss. 2

Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, Z. F. Krasil’nik
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Volume:
41
Language:
english
Pages:
5
DOI:
10.1134/s1063782607020108
Date:
February, 2007
File:
PDF, 255 KB
english, 2007
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