1.8-μm laser diodes based on quantum-size AlInGaAs/InP...

Semiconductors 2007 / 07 Vol. 41; Iss. 7

1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures

A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov, I. S. Tarasov
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Volume:
41
Language:
english
Pages:
5
DOI:
10.1134/s1063782607070147
Date:
July, 2007
File:
PDF, 264 KB
english, 2007
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