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Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects
A. M. Ivanov, N. B. Strokan, A. V. Sadokhin, A. A. LebedevVolume:
41
Language:
english
Pages:
5
DOI:
10.1134/s1063782607080222
Date:
August, 2007
File:
PDF, 205 KB
english, 2007