Specific features of kinetics of molecular beam epitaxy of...

Semiconductors 2007 / 09 Vol. 41; Iss. 9

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system

A. N. Alekseev, A. É. Byrnaz, D. M. Krasovitsky, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel’sky, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov, A. P. Shkurko, V. P. Chalyi
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Volume:
41
Language:
english
Pages:
6
DOI:
10.1134/s1063782607090011
Date:
September, 2007
File:
PDF, 267 KB
english, 2007
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