Effect of growth temperature on photoluminescence of...

Semiconductors 2007 / 11 Vol. 41; Iss. 11

Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

M. V. Shaleev, A. V. Novikov, A. N. Yablonskiĭ, O. A. Kuznetsov, Yu. N. Drozdov, D. N. Lobanov, Z. F. Krasil’nik
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Volume:
41
Language:
english
Pages:
5
DOI:
10.1134/s1063782607110152
Date:
November, 2007
File:
PDF, 294 KB
english, 2007
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