Luminescence properties of light-emitting diodes based on...

Semiconductors 2008 / 03 Vol. 42; Iss. 3

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor

A. N. Gruzintsev, C. Barthou, P. Benalloul
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Volume:
42
Language:
english
Pages:
5
DOI:
10.1134/s1063782608030226
Date:
March, 2008
File:
PDF, 201 KB
english, 2008
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