Study of the properties of the surface of gallium arsenide...

Semiconductors 2008 / 05 Vol. 42; Iss. 5

Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy

V. G. Bozhkov, N. A. Torkhov, I. V. Ivonin, V. A. Novikov
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Volume:
42
Language:
english
Pages:
9
DOI:
10.1134/s1063782608050084
Date:
May, 2008
File:
PDF, 449 KB
english, 2008
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