Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, V. P. Klad’ko, R. V. Konakova, Ya. Ya. Kudrik, A. V. Kuchuk, V. V. Milenin, Yu. N. Sveshnikov, V. N. SheremetVolume:
42
Language:
english
Pages:
5
DOI:
10.1134/s1063782608060092
Date:
June, 2008
File:
PDF, 262 KB
english, 2008