Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals
G. A. Kachurin, S. G. Cherkova, D. V. Marin, A. K. Gutakovskiĭ, A. G. Cherkov, V. A. VolodinVolume:
42
Language:
english
Pages:
5
DOI:
10.1134/s1063782608090224
Date:
September, 2008
File:
PDF, 338 KB
english, 2008