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Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field
B. M. Kostishko, A. V. Zolotov, Yu. S. NagornovVolume:
43
Language:
english
Pages:
4
DOI:
10.1134/s1063782609030178
Date:
March, 2009
File:
PDF, 240 KB
english, 2009