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Mechanisms of doping and the intensity of emission from intracenterf-ftransitions in the doping Eu impurity in structures with InxGa1 −xN/GaN quantum wells
M. M. Mezdrogina, V. V. Krivolapchuk, V. N. Petrov, Yu. V. Kozhanova, E. Yu. Danilovski, R. V. Kuz’minVolume:
43
Language:
english
Pages:
11
DOI:
10.1134/s1063782609040083
Date:
April, 2009
File:
PDF, 367 KB
english, 2009