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Light-emitting diodes of “Warm” white luminescence on the basis ofp-nheterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets
N. P. Soshchin, N. A. Galchina, L. M. Kogan, S. S. Shirokov, A. E. YunovichVolume:
43
Language:
english
Pages:
5
DOI:
10.1134/s1063782609050248
Date:
May, 2009
File:
PDF, 193 KB
english, 2009