Effect of strain relaxation on active-region formation in...

Semiconductors 2009 / 06 Vol. 43; Iss. 6

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A. V. Sakharov, W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, S. O. Usov, V. S. Sizov, G. A. Mikhailovsky, N. A. Cherkashin, M. Hytch, F. Hue, E. V. Yakovlev, A. V. Lobanova, A. F. Tsat
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Volume:
43
Language:
english
Pages:
6
DOI:
10.1134/s1063782609060232
Date:
June, 2009
File:
PDF, 260 KB
english, 2009
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