High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus
V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. SemyaginVolume:
43
Language:
english
Pages:
8
DOI:
10.1134/s1063782609080211
Date:
August, 2009
File:
PDF, 265 KB
english, 2009